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| Schottky Barrier Diodes (SBD) MA2X707 Silicon epitaxial planar type For UHF mixer I Features * Small forward voltage VF * Optimum for UHF mixer because of its large conversion gain (GC) * Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1.6 - 0.1 + 0.2 INDICATES CATHODE Unit : mm 1 2 2.7 - 0.1 3.3 0.2 *(3.8 0.2) + 0.2 5 0.3 0 to 0.05 Parameter Reverse voltage (DC) Forward voltage Junction temperature Storage temperature Symbol VR VF Tj Tstg Rating 5 0.5 125 -55 to +125 Unit V V C C 5 *( ): WL type 1 : Anode 2 : Cathode Mini Type Package (2-pin) Marking Symbol: 5B I Electrical Characteristics Ta = 25C Parameter Forward current (DC) Reverse current (DC) Forward voltage (DC) Reverse break down voltage (DC) Terminal capacitance Conversion gain*1,2 Static breakdown strength Symbol IF IR VF V(BR)R Ct GC VF = 0.5 V VR = 5 V IF = 2 mA IR = 1 mA VR = 0.5 V, f = 1 MHz RF = 890 MHz, LO = 935 MHz, IF = 45 MHz C = 100 pF, Breakdown judgment point IR 35 A 5 0.65 -7 100 0.85 -5 200 1.05 0.25 Conditions Min 35 Typ Max 100 35 Unit mA A V V pF dB V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Noise figure is 8.5 dB. 3. Rated input/output frequency: 935 MHz 4. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed. *2 : Set min. GC = -7 dB. Out-spec products, if any, this specification would be reviewed 0.16 - 0.03 + 0.1 I Absolute Maximum Ratings Ta = 25C 1.1 - 0.1 + 0.2 0.55 0.1 1 MA2X707 IF V F 103 Ta = 25C Schottky Barrier Diodes (SBD) IR V R 103 Ta = 25C Ct VR 10 f = 1 MHz Ta = 25C 5 Reverse current IR (A) 102 Terminal capacitance Ct (pF) 0 4 8 12 16 Forward current IF (mA) 102 3 2 10 10 1 1 0.5 0.3 0.2 1 10-1 10-1 0 0.4 0.8 1.2 1.6 2.0 2.4 10-2 0.1 0 4 8 12 16 20 24 28 32 36 40 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) VB C 300 0 GC PLOC Ta = 25C -4 Conversion gain GC (dB) Static breakdown VB (V) 200 -8 -12 100 -16 -20 0 10 102 103 104 -24 -20 -10 0 10 20 30 Capacitor capacitance C (pF) Local input power PLOC (dBm) 2 |
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